Infineon Technologies - IRFSL4710PBF

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IRFSL4710PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFSL4710PBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 75 A;
Datasheet IRFSL4710PBF Datasheet
In Stock341
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 200 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 75 A
Maximum Drain Current (Abs) (ID): 75 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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