IRFSL7530PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRFSL7530PBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; No. of Terminals: 3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	IRFSL7530PBF Datasheet
In Stock	801

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	195 A
Maximum Pulsed Drain Current (IDM):	760 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	375 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.002 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	1025 mJ
JEDEC-95 Code:	TO-262AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	195 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
801	$1.790	$1,433.790

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