IRFTS8342TRPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRFTS8342TRPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
Datasheet	IRFTS8342TRPBF Datasheet
In Stock	130

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8.2 A
Maximum Pulsed Drain Current (IDM):	80 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.019 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Maximum Drain Current (Abs) (ID):	8.2 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
130	$0.086	$11.180

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