Infineon Technologies - IRG4MC50FSCX

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IRG4MC50FSCX by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG4MC50FSCX
Description N-Channel; Maximum Collector Current (IC): 35 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum VCEsat: 2 V; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IRG4MC50FSCX Datasheet
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NAME DESCRIPTION
Nominal Turn Off Time (toff): 875 ns
Maximum Collector Current (IC): 35 A
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 25000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2 V
Minimum Operating Temperature: -55 Cel
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