IRG4PC30FDPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG4PC30FDPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Case Connection: COLLECTOR;
Datasheet	IRG4PC30FDPBF Datasheet
In Stock	255

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	31 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN OVER NICKEL
Nominal Turn Off Time (toff):	620 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	100 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	69 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-247AC
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	FAST SWITCHING, ULTRA FAST SOFT RECOVERY
Maximum Gate-Emitter Voltage:	20 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
255	$2.348	$598.740

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