Infineon Technologies - IRG4PC50S-PPBF

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IRG4PC50S-PPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG4PC50S-PPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 41 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IRG4PC50S-PPBF Datasheet
In Stock923
NAME DESCRIPTION
Maximum Collector Current (IC): 41 A
Maximum Power Dissipation (Abs): 200 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 6 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
JESD-609 Code: e3
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