Infineon Technologies - IRG4RC10SD

IRG4RC10SD by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG4RC10SD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 14 A; Nominal Turn Off Time (toff): 1780 ns; Additional Features: LOW CONDUCTION LOSS;
Datasheet IRG4RC10SD Datasheet
In Stock337
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 14 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Nominal Turn Off Time (toff): 1780 ns
No. of Terminals: 2
Terminal Position: SINGLE
Nominal Turn On Time (ton): 106 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: LOW CONDUCTION LOSS
Peak Reflow Temperature (C): 240
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Pricing (USD)

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