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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRG5K400HF06B |
| Description | N-Channel; Maximum Collector Current (IC): 400 A; Maximum Gate-Emitter Voltage: 20 V; Nominal Turn On Time (ton): 390000 ns; Nominal Turn Off Time (toff): 1440 ns; Maximum Collector-Emitter Voltage: 600 V; |
| Datasheet | IRG5K400HF06B Datasheet |
| In Stock | 558 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Turn Off Time (toff): | 1440 ns |
| Maximum Collector Current (IC): | 400 A |
| Maximum Collector-Emitter Voltage: | 600 V |
| Nominal Turn On Time (ton): | 390000 ns |
| Transistor Element Material: | SILICON |
| Maximum Gate-Emitter Threshold Voltage: | 5.5 V |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-Channel |
| Maximum VCEsat: | 2.1 V |
| Minimum Operating Temperature: | -40 Cel |









