Infineon Technologies - IRG7PH35UD1MPBF

IRG7PH35UD1MPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PH35UD1MPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 179 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6 V;
Datasheet IRG7PH35UD1MPBF Datasheet
In Stock881
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 179 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 105 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
881 $2.860 $2,519.660

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