Infineon Technologies - IRG7PH37K10DPBF

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IRG7PH37K10DPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PH37K10DPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 216 W; Maximum Collector Current (IC): 45 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 30 V;
Datasheet IRG7PH37K10DPBF Datasheet
In Stock680
NAME DESCRIPTION
Maximum Collector Current (IC): 45 A
Maximum Power Dissipation (Abs): 216 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Rise Time (tr): 45 ns
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 100 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
680 $3.900 $2,652.000

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