Infineon Technologies - IRG7PH50U-EP

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IRG7PH50U-EP by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PH50U-EP
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 556 W; Maximum Collector Current (IC): 140 A; Maximum Operating Temperature: 175 Cel;
Datasheet IRG7PH50U-EP Datasheet
In Stock755
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 140 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 60 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 710 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 556 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 75 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 65 ns
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
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