Infineon Technologies - IRG7PSH54K10DPBF

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IRG7PSH54K10DPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PSH54K10DPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 120 A; Maximum Gate-Emitter Voltage: 30 V; Maximum Fall Time (tf): 90 ns;
Datasheet IRG7PSH54K10DPBF Datasheet
In Stock234
NAME DESCRIPTION
Maximum Collector Current (IC): 120 A
Maximum Power Dissipation (Abs): 520 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Rise Time (tr): 105 ns
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 90 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
234 $9.120 $2,134.080

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