Infineon Technologies - IRGC49B120KBPBF

  1. Home
  2. Infineon Technologies - IRGC49B120KBPBF
IRGC49B120KBPBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRGC49B120KBPBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;
Datasheet IRGC49B120KBPBF Datasheet
In Stock99
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: O-XUUC-N
No. of Elements: 1
Package Shape: ROUND
Terminal Form: NO LEAD
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
99 - -

Popular Products

Category Top Products

IKW40N120T2XK by Infineon Technologies

IKW40N120T2XK

Infineon Technologies

IKW40N120T2XK by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 75A. It is commonly used for power control applications due to its fast nominal turn on time of 60ns and built-in diode.
IRGPS60B120KDP by Infineon Technologies

IRGPS60B120KDP

Infineon Technologies

IRGPS60B120KDP by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It is commonly used in motor control applications due to its single configuration with built-in diode.
FGH40N60SFDTU_F085 by Fairchild Semiconductor

FGH40N60SFDTU_F085

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
FF225R12ME4BOSA1 by Infineon Technologies

FF225R12ME4BOSA1

Infineon Technologies

FF225R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 320A, and turn-off time of 600ns. Ideal for applications requiring high power efficiency in industrial systems.
IRG4PC30FPBF by Infineon Technologies

IRG4PC30FPBF

Infineon Technologies

IRG4PC30FPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a turn-off time of 640ns, turn-on time of 36ns, and can dissipate up to 100W power. Ideal for power control applications due to its single configuration and flange mount package style.
IKW75N65EL5XKSA1 by Infineon Technologies

IKW75N65EL5XKSA1

Infineon Technologies

IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.
FS150R06KE3BOSA1 by Infineon Technologies

FS150R06KE3BOSA1

Infineon Technologies

FS150R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 600V, current of 150A, and turn off time of 450ns. Ideal for applications requiring high power efficiency and temperature resistance like industrial motor drives.
AFGHL50T65SQD by Onsemi

AFGHL50T65SQD

Onsemi

AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.
FS150R12KT4_B11 by Infineon Technologies

FS150R12KT4_B11

Infineon Technologies

FS150R12KT4_B11 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a VCEsat of 2.2V, IC of 150A, and Pmax of 750W. Ideal for high-power applications requiring fast switching such as motor drives and power supplies due to its low on/off times and high collector-emitter voltage.
FGH60N60UFDTU by Fairchild Semiconductor

FGH60N60UFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 120 A; Terminal Finish: MATTE TIN;
FGAF40N60SMD by Onsemi

FGAF40N60SMD

Onsemi

FGAF40N60SMD by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration with built-in diode, ideal for motor control applications. This IGBT has a max power dissipation of 115W, making it suitable for high-power operations at temperatures up to 175°C.
IRG4BC30SPBF by International Rectifier

IRG4BC30SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; No. of Elements: 1;
IKW40N65F5FKSA1 by Infineon Technologies

IKW40N65F5FKSA1

Infineon Technologies

IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.
IXBX75N170 by Littelfuse

IXBX75N170

Littelfuse

IXBX75N170 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. Features include 840ns turn-off time and -55 to 150 °C operating temperature range.
FZ400R17KE4HOSA1 by Infineon Technologies

FZ400R17KE4HOSA1

Infineon Technologies

FZ400R17KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1700V and current of 550A. It has a turn on time of 355ns and turn off time of 930ns, making it ideal for power control applications. The transistor comes in a rectangular package style with built-in diode, suitable for flange mount installations at temperatures up to 150°C.
IXXX300N60B3 by Littelfuse

IXXX300N60B3

Littelfuse

The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
MG06100S-BR1MM by Littelfuse

MG06100S-BR1MM

Littelfuse

The Littelfuse MG06100S-BR1MM is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, max current of 150A, and turn off time of 390ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 150°C with UL RECOGNIZED standard compliance.
IKW75N60H3FKSA1 by Infineon Technologies

IKW75N60H3FKSA1

Infineon Technologies

IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.
IXGH10N170A by IXYS Corporation

IXGH10N170A

IXYS Corporation

IXGH10N170A by IXYS Corp is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 10A. It is commonly used in motor control applications due to its fast nominal turn-off time of 240ns.
AUIRGDC0250 by Infineon Technologies

AUIRGDC0250

Infineon Technologies

AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.