IRGI4085DPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGI4085DPBF
Description	N-Channel; Maximum Collector Current (IC): 70 A; Nominal Turn On Time (ton): 84 ns; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 30 V; Maximum Collector-Emitter Voltage: 330 V;
Datasheet	IRGI4085DPBF Datasheet
In Stock	855

NAME	DESCRIPTION
Nominal Turn Off Time (toff):	214 ns
Maximum Collector Current (IC):	70 A
Maximum Collector-Emitter Voltage:	330 V
Nominal Turn On Time (ton):	84 ns
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	5 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	30 V
Polarity or Channel Type:	N-Channel
Minimum Operating Temperature:	-40 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
855	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;