IRGMIC50UU by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGMIC50UU
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 45 A; Transistor Element Material: SILICON;
Datasheet	IRGMIC50UU Datasheet
In Stock	780

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Collector Current (IC):	45 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	5.5 V
JEDEC-95 Code:	TO-259AA
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	200 W
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-MSFM-P3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Additional Features:	ULTRA FAST
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
780	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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