Infineon Technologies - IRGP4063D1-EPBF

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IRGP4063D1-EPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGP4063D1-EPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet IRGP4063D1-EPBF Datasheet
In Stock323
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 330 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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