Infineon Technologies - IRGP4263DPBF

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IRGP4263DPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGP4263DPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 325 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Maximum Operating Temperature: 175 Cel;
Datasheet IRGP4263DPBF Datasheet
In Stock183
NAME DESCRIPTION
Maximum Collector Current (IC): 90 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Rise Time (tr): 80 ns
Maximum Gate-Emitter Threshold Voltage: 7.7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 325 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Fall Time (tf): 50 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
183 $4.570 $836.310

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