Infineon Technologies - IRGP4650DPBF

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IRGP4650DPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGP4650DPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 76 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Rise Time (tr): 42 ns;
Datasheet IRGP4650DPBF Datasheet
In Stock647
NAME DESCRIPTION
Maximum Collector Current (IC): 76 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Rise Time (tr): 42 ns
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 268 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Fall Time (tf): 54 ns
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