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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRGP4760DPBF |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 325 W; Maximum Collector Current (IC): 90 A; No. of Terminals: 3; |
Datasheet | IRGP4760DPBF Datasheet |
In Stock | 396 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 90 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Maximum Rise Time (tr): | 80 ns |
Transistor Application: | POWER CONTROL |
Maximum Turn On Time (ton): | 170 ns |
Maximum Gate-Emitter Threshold Voltage: | 7.4 V |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 170 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 325 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 130 ns |
Package Style (Meter): | FLANGE MOUNT |
Maximum Turn Off Time (toff): | 210 ns |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | COLLECTOR |
Maximum Fall Time (tf): | 50 ns |
JEDEC-95 Code: | TO-247AC |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Maximum Collector-Emitter Voltage: | 650 V |
Maximum Gate-Emitter Voltage: | 20 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 2 V |