Infineon Technologies - IRGS10B60KDTRRPBF

  1. Home
  2. Infineon Technologies - IRGS10B60KDTRRPBF
IRGS10B60KDTRRPBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRGS10B60KDTRRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 22 A; Terminal Position: SINGLE; Terminal Form: GULL WING;
Datasheet IRGS10B60KDTRRPBF Datasheet
In Stock891
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 22 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
JESD-609 Code: e3
Nominal Turn Off Time (toff): 276 ns
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 50 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
891 - -

Popular Products

Category Top Products

STGB14NC60KDT4 by STMicroelectronics

STGB14NC60KDT4

STMicroelectronics

STGB14NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 80W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
ISL9V3040D3ST by Onsemi

ISL9V3040D3ST

Onsemi

ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
IKW40N120H3 by Infineon Technologies

IKW40N120H3

Infineon Technologies

IKW40N120H3 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 483W Ptot. It features a built-in diode for power control applications. With a turn-off time of 414ns and turn-on time of 78ns, it operates at up to 175°C temperature.
FP15R12W1T4B3BOMA1 by Infineon Technologies

FP15R12W1T4B3BOMA1

Infineon Technologies

Infineon Technologies' FP15R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and nominal turn off time of 495ns. Ideal for power control applications, this UL approved transistor features a rectangular package style with flange mount.
NGTB40N120S3WG by Onsemi

NGTB40N120S3WG

Onsemi

NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
FZ900R12KP4HOSA1 by Infineon Technologies

FZ900R12KP4HOSA1

Infineon Technologies

FZ900R12KP4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn off time of 840ns and turn on time of 370ns, making it ideal for power control applications. This single transistor with built-in diode comes in a rectangular package style with flange mount for easy installation.
IXGH72N60A3 by Littelfuse

IXGH72N60A3

Littelfuse

IXGH72N60A3 by Littelfuse is an N-CHANNEL IGBT transistor with VCEsat of 1.35V, IC of 75A, and Ptot of 540W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 885ns and high operating temperature range (-55 to 150°C).
APT200GN60JDQ4 by Advanced Power Technology

APT200GN60JDQ4

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 283 A; Nominal Turn Off Time (toff): 660 ns; JESD-30 Code: R-PUFM-X4;
IRGP4266DPBF by International Rectifier

IRGP4266DPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Peak Reflow Temperature (C): NOT SPECIFIED;
APT200GN60JDQ4 by Microsemi

APT200GN60JDQ4

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 283 A; Maximum Collector-Emitter Voltage: 600 V;
STGE200NB60S by STMicroelectronics

STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.
FPF1C2P5MF07AM by Onsemi

FPF1C2P5MF07AM

Onsemi

FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.
IXXX200N60B3 by IXYS Corporation

IXXX200N60B3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 380 A; Maximum Collector-Emitter Voltage: 600 V;
FGH40N60SMDF_F085 by Onsemi

FGH40N60SMDF_F085

Onsemi

FGH40N60SMDF_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 349W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates in temperatures ranging from -55°C to 175°C, making it suitable for various industrial uses.
IXXX300N60B3 by IXYS Corporation

IXXX300N60B3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
FF400R06KE3HOSA1 by Infineon Technologies

FF400R06KE3HOSA1

Infineon Technologies

FF400R06KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 500A. It is designed for power control applications, offering a nominal turn-off time of 600ns and a nominal turn-on time of 190ns.
AFGHL50T65SQD by Onsemi

AFGHL50T65SQD

Onsemi

AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.
6PS04512E43G37986NOSA1 by Infineon Technologies

6PS04512E43G37986NOSA1

Infineon Technologies

Infineon's 6PS04512E43G37986NOSA1 is an N-CHANNEL IGBT with 6 elements, max voltage of 1200V, and operating temp of 150°C. Ideal for power control applications due to its silicon material and isolated case connection in a rectangular package style.
IKW75N60H3FKSA1 by Infineon Technologies

IKW75N60H3FKSA1

Infineon Technologies

IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.
FGH40N60UFTU by Fairchild Semiconductor

FGH40N60UFTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;