Infineon Technologies - IRGS4055PBF

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IRGS4055PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGS4055PBF
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 255 W; Maximum Collector Current (IC): 110 A; Maximum Operating Temperature: 150 Cel; Terminal Finish: MATTE TIN OVER NICKEL;
Datasheet IRGS4055PBF Datasheet
In Stock322
NAME DESCRIPTION
Maximum Collector Current (IC): 110 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 55 ns
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
Maximum Power Dissipation (Abs): 255 W
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 198 ns
Moisture Sensitivity Level (MSL): 1
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