Infineon Technologies - IRGS4715DTRLPBF

IRG4BC10SD-SPBF by Infineon is an N-channel IGBT with a max VCEsat of 1.8V and IC of 14A, ideal for power control applications. It has a package style of small outline, operates at temperatures from -55 to 150°C, and features a built-in diode for efficient switching performance.

FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.

The Mitsubishi Electric MG400V1US51A is an N-CHANNEL IGBT transistor with a max VCEsat of 4.5V and IC of 400A. Ideal for power control applications, it has a toff of 770ns and ton of 210ns. With a max operating temperature of 150°C, this UL RECOGNIZED component offers high power dissipation at 2750W in a RECTANGULAR package style.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 215 A; Terminal Form: UNSPECIFIED;

Onsemi's FGD4536TM-F065 is an N-CHANNEL IGBT with VCEsat of 1.8V and max power dissipation of 125W. Ideal for general purpose switching applications, it has a turn off time of 292ns and operates b/w -55 to 150°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;

Fuji Electric's 7MBR50VB120-50 IGBT features N-CHANNEL polarity, 1200V VCEsat, and 50A IC. Ideal for power control applications with a max operating temperature of 175°C.

Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Qualification: Not Qualified;

APT150GN60JDQ4 by Microchip Technology is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 30V. It has a nominal turn-off time of 575ns, making it ideal for power control applications requiring high current handling capabilities up to 220A. The transistor's package style is flange mount, and it is UL recognized for reliable performance in various industrial settings.

FS50R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 610 ns and ton of 140 ns, suitable for high-power applications. With a Vce of 1200V and IC of 75A, it operates at up to 150°C making it ideal for industrial power systems.

N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Peak Reflow Temperature (C): NOT SPECIFIED;

Infineon's F3L150R07W2E3B11BOMA1 IGBT features N-CHANNEL polarity, 650V VCEmax, and 150A IC. Ideal for power control applications with a max operating temp of 150°C. Complex configuration with 4 elements, 480ns toff, and 155ns ton for efficient power management.

Infineon's IGP40N65H5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

Mitsubishi Electric's CM300DU-24NFH is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Features include 1200V VCEsat, 300A IC, and 1900W power dissipation. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.

IXXH75N60C3 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 600V. It is commonly used for power control applications due to its high power dissipation of 750W and fast nominal turn-off time of 185ns.

IXGH100N30C3 by Littelfuse is an N-CHANNEL IGBT with 300V VCE, 75A IC, and 460W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.85V and fast turn-off time of 244ns. Package style is FLANGE MOUNT with a max operating temp of 150°C.

FGB20N60SFD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Ptot. Ideal for power control applications due to its fast tr of 21ns and tf of 43ns. AEC-Q101 certified for automotive use, it features a small outline package style.

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;