IRHG58110PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHG58110PBF
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
Datasheet	IRHG58110PBF Datasheet
In Stock	501

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.6 A
Maximum Pulsed Drain Current (IDM):	6.4 A
Surface Mount:	NO
No. of Terminals:	14
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-CDIP-T14
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.29 ohm
Avalanche Energy Rating (EAS):	130 mJ
JEDEC-95 Code:	MO-036AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Additional Features:	HIGH RELIABILITY
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
501	-	-

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