Infineon Technologies - IRHG9110SCS

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IRHG9110SCS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHG9110SCS
Description P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Maximum Drain-Source On Resistance: 1.2 ohm;
Datasheet IRHG9110SCS Datasheet
In Stock324
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 4 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .75 A
JEDEC-95 Code: MO-036AB
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 14
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-CDIP-T14
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 1.2 ohm
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