Infineon Technologies - IRHLF680Z4PBF

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IRHLF680Z4PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHLF680Z4PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: O-MBCY-W3; Package Style (Meter): CYLINDRICAL;
Datasheet IRHLF680Z4PBF Datasheet
In Stock692
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.6 A
JEDEC-95 Code: TO-39
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .5 ohm
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