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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRHLQ73214 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: S-CQCC-N28; |
Datasheet | IRHLQ73214 Datasheet |
In Stock | 977 |
NAME | DESCRIPTION |
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Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2.6 A |
Maximum Pulsed Drain Current (IDM): | 10.4 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 28 |
Maximum Power Dissipation (Abs): | 12 W |
Terminal Position: | QUAD |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | S-CQCC-N28 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 1 ohm |
Avalanche Energy Rating (EAS): | 38.5 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 250 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 2.6 A |