IRHLUC7670Z4 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHLUC7670Z4
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .75 ohm; Terminal Form: NO LEAD;
Datasheet	IRHLUC7670Z4 Datasheet
In Stock	366

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.89 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-XDSO-N6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.75 ohm
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	CMOS COMPATIBLE
Maximum Drain Current (Abs) (ID):	.89 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
366	-	-

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