IRHNJ57234SE by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHNJ57234SE
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet	IRHNJ57234SE Datasheet
In Stock	1,155

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	40 A
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-CBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.4 ohm
Avalanche Energy Rating (EAS):	58 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Additional Features:	ULTRA-LOW RESISTANCE

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,155	-	-

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