IRHNJ67230SCV by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHNJ67230SCV
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Avalanche Energy Rating (EAS): 60 mJ; Terminal Position: BOTTOM;
Datasheet	IRHNJ67230SCV Datasheet
In Stock	1,252

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	60 mJ
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	19 A
Maximum Pulsed Drain Current (IDM):	76 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	200 V
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-CBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.13 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,252	-	-

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