Infineon Technologies - IRHQ57214SESCS

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IRHQ57214SESCS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHQ57214SESCS
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: S-CQCC-N28; Minimum DS Breakdown Voltage: 250 V; Transistor Application: SWITCHING;
Datasheet IRHQ57214SESCS Datasheet
In Stock870
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 30 mJ
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.9 A
Maximum Pulsed Drain Current (IDM): 7.6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 28
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-CQCC-N28
No. of Elements: 4
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 1.5 ohm
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