Infineon Technologies - IRL7472L1TRPBF

  1. Home
  2. Infineon Technologies - IRL7472L1TRPBF
IRL7472L1TRPBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRL7472L1TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .00045 ohm;
Datasheet IRL7472L1TRPBF Datasheet
In Stock7,919
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 765 mJ
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 68 A
Maximum Pulsed Drain Current (IDM): 1500 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 9
Minimum DS Breakdown Voltage: 40 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N9
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00045 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
7,919 - -

Popular Products

Category Top Products

FDD4243-G by Onsemi

FDD4243-G

Onsemi

Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
FDD4243 by Fairchild Semiconductor

FDD4243

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
ZVN0545GTA by Diodes Incorporated

ZVN0545GTA

Diodes Incorporated

ZVN0545GTA by Diodes Inc. is a N-CHANNEL FET with 450V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 0.6A IDM, and 50 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 2W and operates b/w -55 to +150°C.
IRFR9024NTRPBF by International Rectifier

IRFR9024NTRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Drain Current (Abs) (ID): 11 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFP460 by Vishay Siliconix

IRFP460

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain Current (ID): 20 A; No. of Terminals: 3;
SI7415DN-T1-GE3 by Vishay Intertechnology

SI7415DN-T1-GE3

Vishay Intertechnology

SI7415DN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3.6A and max power dissipation of 3.8W.
IRFS4410ZTRLPBF by Infineon Technologies

IRFS4410ZTRLPBF

Infineon Technologies

IRFS4410ZTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 390A IDM, 242mJ EAS, and 0.009 ohm RDS(on). Ideal for SWITCHING applications, this ENHANCEMENT MODE transistor operates at up to 175°C and has a max power dissipation of 230W in a SMALL OUTLINE package.
FDD4243 by Onsemi

FDD4243

Onsemi

The Onsemi FDD4243 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 60A IDM, and 0.064 ohm RDS. Ideal for power management applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power control in compact designs.
IRF640STRLPBF by Vishay Intertechnology

IRF640STRLPBF

Vishay Intertechnology

Vishay Intertechnology's IRF640STRLPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 72A IDM, 580mJ EAS, and 0.18 ohm RDS(on). With a max power dissipation of 130W and operating temperature up to 175°C, it suits various high-power electronic designs.
FDS8984_F085 by Fairchild Semiconductor

FDS8984_F085

Fairchild Semiconductor

FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
MSCSM170AM11CT3AG by Microchip Technology

MSCSM170AM11CT3AG

Microchip Technology

MSCSM170AM11CT3AG by Microchip Technology is a N-CHANNEL FET with 1700V DS Breakdown Voltage, 480A IDM, and 0.0113 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR technology and SILICON CARBIDE material.
IRF540SPBF by Vishay Intertechnology

IRF540SPBF

Vishay Intertechnology

Vishay Intertechnology's IRF540SPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 110A IDM, 230mJ EAS, and 0.077 ohm RDS(on). With a max power dissipation of 150W and operating temperature up to 175°C, it is suitable for high-power circuits requiring efficient switching capabilities.
CSD19536KTT by Texas Instruments

CSD19536KTT

Texas Instruments

CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
JANTX2N6796U by Defense Logistics Agency

JANTX2N6796U

Defense Logistics Agency

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-CQCC-N15; Maximum Pulsed Drain Current (IDM): 32 A; Operating Mode: ENHANCEMENT MODE;
IRLML9303TRPBF by International Rectifier

IRLML9303TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
NDT456P by Fairchild Semiconductor

NDT456P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (Abs) (ID): 7.5 A;
FDS9926A by Onsemi

FDS9926A

Onsemi

FDS9926A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 6.5A, 0.03 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a Max Power Dissipation of 1.6W and can handle up to 20A Pulsed Drain Current.
IRFR540ZTRPBF by Infineon Technologies

IRFR540ZTRPBF

Infineon Technologies

IRFR540ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 140A and EAS of 39mJ, operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals offers 0.0285 ohm RDS(ON) and 91W Pd max.
IRF9530 by International Rectifier

IRF9530

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Maximum Drain Current (ID): 12 A;
FQD3P50TM by Fairchild Semiconductor

FQD3P50TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;