IRLB8314PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRLB8314PBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 664 A; Maximum Feedback Capacitance (Crss): 500 pF;
Datasheet	IRLB8314PBF Datasheet
In Stock	17,446

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	130 A
Maximum Pulsed Drain Current (IDM):	664 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.0032 ohm
Avalanche Energy Rating (EAS):	180 mJ
Maximum Feedback Capacitance (Crss):	500 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Maximum Drain Current (Abs) (ID):	171 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
17,446	-	-

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