Infineon Technologies - ISP14EP15LM

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ISP14EP15LM by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number ISP14EP15LM
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; Maximum Drain-Source On Resistance: 1.38 ohm; Terminal Position: DUAL;
Datasheet ISP14EP15LM Datasheet
In Stock344
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 90 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 11 pF
Maximum Drain Current (ID): 1.29 A
Maximum Pulsed Drain Current (IDM): 5.2 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 150 V
Maximum Power Dissipation (Abs): 5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.38 ohm
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