ITD50N04S4L-07 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	ITD50N04S4L-07
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G4; No. of Elements: 2; JESD-609 Code: e3;
Datasheet	ITD50N04S4L-07 Datasheet
In Stock	5

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0072 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	45 mJ
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
5	-	-

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