Infineon Technologies - ITD50N04S4L07ATMA1

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ITD50N04S4L07ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number ITD50N04S4L07ATMA1
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 45 mJ; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet ITD50N04S4L07ATMA1 Datasheet
In Stock745
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0072 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 45 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
745 $0.564 $420.180

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