Infineon Technologies - JAN2N7434

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JAN2N7434 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JAN2N7434
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet JAN2N7434 Datasheet
In Stock151
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 3 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 31 A
Maximum Drain Current (Abs) (ID): 31 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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