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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | JANHCAR2N7391 |
| Description | N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; |
| Datasheet | JANHCAR2N7391 Datasheet |
| In Stock | 204 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 22 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 250 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | RADIATION HARDENED |
| Maximum Operating Temperature: | 150 Cel |
| Reference Standard: | MIL-19500/657A |
| Maximum Drain Current (Abs) (ID): | 22 A |
| Case Connection: | DRAIN |
| Moisture Sensitivity Level (MSL): | 1 |
