JANSF2N7426 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	JANSF2N7426
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Style (Meter): FLANGE MOUNT;
Datasheet	JANSF2N7426 Datasheet
In Stock	689

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	27 A
Maximum Pulsed Drain Current (IDM):	108 A
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	3 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	S-CSFM-P3
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.16 ohm
Avalanche Energy Rating (EAS):	500 mJ
JEDEC-95 Code:	TO-254AA
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	200 V
Qualification:	Qualified
Reference Standard:	MIL-19500/660
Maximum Drain Current (Abs) (ID):	23 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
689	-	-

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