Infineon Technologies - JANSF2N7650U8C

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JANSF2N7650U8C by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSF2N7650U8C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Package Shape: RECTANGULAR; No. of Elements: 1;
Datasheet JANSF2N7650U8C Datasheet
In Stock693
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 31 ns
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 100 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 54 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
Maximum Turn Off Time (toff): 41 ns
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .03 ohm
Avalanche Energy Rating (EAS): 520 mJ
Maximum Feedback Capacitance (Crss): 2.6 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
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