Infineon Technologies - JANSR2N7473U2

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JANSR2N7473U2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7473U2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Minimum DS Breakdown Voltage: 200 V; Terminal Finish: TIN LEAD;
Datasheet JANSR2N7473U2 Datasheet
In Stock1,392
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 53.5 A
Maximum Pulsed Drain Current (IDM): 214 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 250 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .038 ohm
Avalanche Energy Rating (EAS): 380 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Qualified
Additional Features: RADIATION HARDENED
Maximum Drain Current (Abs) (ID): 53.5 A
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