Infineon Technologies - JANSR2N7476T1

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JANSR2N7476T1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7476T1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 45 A; No. of Elements: 1;
Datasheet JANSR2N7476T1 Datasheet
In Stock466
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 45 A
Maximum Pulsed Drain Current (IDM): 180 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 200 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-PSFM-T3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .044 ohm
Avalanche Energy Rating (EAS): 256 mJ
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Qualified
Maximum Drain Current (Abs) (ID): 45 A
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