Infineon Technologies - JANSR2N7616UBCN

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JANSR2N7616UBCN by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7616UBCN
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: NO LEAD; Maximum Drain-Source On Resistance: .68 ohm;
Datasheet JANSR2N7616UBCN Datasheet
In Stock174
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: MIL-19500/744
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .68 ohm
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