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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | JANTXV2N7334PBF |
| Description | N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): 1 A; |
| Datasheet | JANTXV2N7334PBF Datasheet |
| In Stock | 282 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1 A |
| Maximum Pulsed Drain Current (IDM): | 4 A |
| Surface Mount: | NO |
| No. of Terminals: | 14 |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-CDIP-T14 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .8 ohm |
| Avalanche Energy Rating (EAS): | 75 mJ |
| JEDEC-95 Code: | MO-036AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | MIL-19500 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
