Infineon Technologies - JANTXVF2N7389U

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JANTXVF2N7389U by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVF2N7389U
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Terminal Form: NO LEAD; Minimum DS Breakdown Voltage: 100 V;
Datasheet JANTXVF2N7389U Datasheet
In Stock518
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6.5 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 15
Minimum DS Breakdown Voltage: 100 V
Qualification: Qualified
Maximum Power Dissipation (Abs): 25 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CBCC-N15
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: MIL-19500/630C
Maximum Drain Current (Abs) (ID): 6.5 A
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