Infineon Technologies - JANTXVH2N7469U

  1. Home
  2. Infineon Technologies - JANTXVH2N7469U
JANTXVH2N7469U by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVH2N7469U
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Qualification: Qualified; Transistor Element Material: SILICON;
Datasheet JANTXVH2N7469U Datasheet
In Stock394
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 26 A
Maximum Pulsed Drain Current (IDM): 104 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 250 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .1 ohm
Avalanche Energy Rating (EAS): 500 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Qualified
Additional Features: RADIATION HARDENED
Reference Standard: MIL-19500/603E
Maximum Drain Current (Abs) (ID): 75 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
394 - -

Popular Products

Category Top Products

AUIRFZ44N by International Rectifier

AUIRFZ44N

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
ZVN0545GTA by Diodes Incorporated

ZVN0545GTA

Diodes Incorporated

ZVN0545GTA by Diodes Inc. is a N-CHANNEL FET with 450V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 0.6A IDM, and 50 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 2W and operates b/w -55 to +150°C.
FDD8424H by Onsemi

FDD8424H

Onsemi

FDD8424H by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It has a 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications, this MOSFET operates in enhancement mode with a max temperature of 150°C.
IRFP460LC by International Rectifier

IRFP460LC

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
STH3N150-2 by STMicroelectronics

STH3N150-2

STMicroelectronics

STH3N150-2 by STMicroelectronics is a N-channel Power FET with 1500V DS breakdown voltage, 10A IDM, and 140W max power dissipation. It's used for switching applications in enhancement mode, featuring a built-in diode and operating up to 150°C.
FQD12N20LTM by Onsemi

FQD12N20LTM

Onsemi

FQD12N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.32 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 55W and can withstand temperatures from -55 to 150°C.
IRLML6401PBF by International Rectifier

IRLML6401PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Feedback Capacitance (Crss): 125 pF; Peak Reflow Temperature (C): 260;
IRF9540NPBF by International Rectifier

IRF9540NPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Terminal Finish: MATTE TIN OVER NICKEL; Maximum Pulsed Drain Current (IDM): 76 A;
IRF7103TRPBF-1 by Infineon Technologies

IRF7103TRPBF-1

Infineon Technologies

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
FDMS86300DC by Fairchild Semiconductor

FDMS86300DC

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
BSC060N10NS3G by Infineon Technologies

BSC060N10NS3G

Infineon Technologies

BSC060N10NS3G by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 360A IDM, and 0.006 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. This PLASTIC/EPOXY transistor has a small outline package style and can withstand temperatures up to 150°C.
FDD4685-F085P by Onsemi

FDD4685-F085P

Onsemi

FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
FQP47P06 by Onsemi

FQP47P06

Onsemi

FQP47P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 47A Drain Current. Ideal for SWITCHING applications, it features an IDM of 188A, EAS of 820mJ, and 0.026 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 160W at 175°C.
IRF640STRRPBF by Vishay Siliconix

IRF640STRRPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSSO-G2;
BSS123 by Sipex

BSS123

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Moisture Sensitivity Level (MSL): 1;
IPT015N10N5ATMA1 by Infineon Technologies

IPT015N10N5ATMA1

Infineon Technologies

Infineon IPT015N10N5ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1200A IDM, 652mJ EAS, and 0.0015 ohm RDS(on). Package style is SMALL OUTLINE with METAL-OXIDE SEMICONDUCTOR technology.
IRF7493TRPBF by International Rectifier

IRF7493TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
CSD88537NDT by Texas Instruments

CSD88537NDT

Texas Instruments

CSD88537NDT by Texas Instruments is an N-channel power FET with 60V DS breakdown voltage, ideal for switching applications. It features separate elements with built-in diode, 108A max pulsed drain current, and 0.019ohm max drain-source resistance. This MOSFET operates in enhancement mode, has a small outline package style, and can withstand temperatures from -55 to 150°C.
BSC900N20NS3GATMA1 by Infineon Technologies

BSC900N20NS3GATMA1

Infineon Technologies

BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.
BSC117N08NS5ATMA1 by Infineon Technologies

BSC117N08NS5ATMA1

Infineon Technologies

Infineon's BSC117N08NS5ATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 196A IDM, 14mJ EAS, and 0.0117 ohm RDS(on). With ENHANCEMENT MODE operation and DUAL terminal position, it offers high performance in a SMALL OUTLINE package.