Infineon Technologies - LASERDISPLPL90AHPSA1

  1. Home
  2. Infineon Technologies - LASERDISPLPL90AHPSA1
LASERDISPLPL90AHPSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number LASERDISPLPL90AHPSA1
Description LASER DIODE;
Datasheet LASERDISPLPL90AHPSA1 Datasheet
In Stock219
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
219 - -

Popular Products

Category Top Products

SDL8032-101 by Onsemi

SDL8032-101

Onsemi

SDL8032-101 by Onsemi is an 850nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
NX8562LF614-BA-AZ by Renesas Electronics

NX8562LF614-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1561; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Semiconductor Material: GaAs; Maximum Operating Temperature: 70 Cel;
NX8566LE358-BC by Renesas Electronics

NX8566LE358-BC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1536; Maximum Forward Voltage: 2 V;
STH91004A by Infineon Technologies

STH91004A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1550;
NX8566LE287-BC by Renesas Electronics

NX8566LE287-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1529; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s;
TOLD320BCC by Toshiba

TOLD320BCC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
NX8567SA610-CC by Renesas Electronics

NX8567SA610-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1561; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
NX8560SJ597-BC by Renesas Electronics

NX8560SJ597-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1560; Minimum Operating Temperature: -5 Cel;
SPLBS79 by Infineon Technologies

SPLBS79

Infineon Technologies

LASER DIODE;
NX8562LF549-BA-AZ by Renesas Electronics

NX8562LF549-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: GaAs; Maximum Operating Temperature: 70 Cel;
NX8560SJ307-BC by Renesas Electronics

NX8560SJ307-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1530; Maximum Response Time: .00000000004 s;
NX8560SJ565-CC by Renesas Electronics

NX8560SJ565-CC

Renesas Electronics

LASER DIODE; Maximum Response Time: .00000000004 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Forward Current: .15 A;
NX8563LAS549-CD-A by Renesas Electronics

NX8563LAS549-CD-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1555; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s;
NX8571SA493-BA by Renesas Electronics

NX8571SA493-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .01 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1549;
NX8567SAM441-BC by Renesas Electronics

NX8567SAM441-BC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1544;
TOLD300 by Toshiba

TOLD300

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: 15 Cel; Maximum Forward Current: .15 A;
NX8560LJ557-BC by Renesas Electronics

NX8560LJ557-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1556; Maximum Response Time: .00000000004 s; Maximum Operating Temperature: 70 Cel;
SDL6032-111 by Onsemi

SDL6032-111

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Minimum Operating Temperature: -10 Cel;
SDL3039-011 by Onsemi

SDL3039-011

Onsemi

SDL3039-011 by Onsemi is a 670nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.
NX8570SA421-BA by Renesas Electronics

NX8570SA421-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1542; Maximum Forward Current: .3 A;