Onsemi - SDL3039-051

  1. Home
  2. Onsemi - SDL3039-051
SDL3039-051 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SDL3039-051
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 680; Semiconductor Material: AlGaInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
Datasheet SDL3039-051 Datasheet
In Stock180
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 680
Maximum Operating Temperature: 60 Cel
Semiconductor Material: AlGaInP
Sub-Category: Laser Diodes
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
180 - -

Popular Products

Category Top Products

SDL3034-201 by Onsemi

SDL3034-201

Onsemi

SDL3034-201 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 780nm. It operates b/w -10 °C to 60°C, suitable for through hole mounting applications in optoelectronics.
SDL3140 by Onsemi

SDL3140

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 790;
NX8570SC634-BA-AZ by Renesas Electronics

NX8570SC634-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1563; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
NX8570SC778-BA by Renesas Electronics

NX8570SC778-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1578; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
DL-3147-060 by Onsemi

DL-3147-060

Onsemi

DL-3147-060 by Onsemi is a Laser Diode with 0.045A max forward current, emitting at 650nm peak wavelength. It operates b/w -10 °C to 70°C, with a max forward voltage of 2.6V. Ideal for applications requiring precise laser technology in various industries.
HLP5400 by Renesas Electronics

HLP5400

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: 0 Cel; Nominal Output Power: 5 W; Maximum Operating Temperature: 50 Cel; Maximum Threshold Current: 80 mA; Shape: RECTANGULAR;
NX8563LA453-CD-A by Renesas Electronics

NX8563LA453-CD-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1545; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .00000000012 s; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP;
NX8571SC976-BA-AZ by Renesas Electronics

NX8571SC976-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1598; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
NX8565LE728-CC by Renesas Electronics

NX8565LE728-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s; Semiconductor Material: GaAs;
SPLCG81 by Infineon Technologies

SPLCG81

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Nominal Output Power: 2000 W; No. of Functions: 1; Maximum Operating Temperature: 60 Cel; Size: 4.5 mm;
SDL3034-101 by Onsemi

SDL3034-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780;
DL-3038-023 by Onsemi

DL-3038-023

Onsemi

DL-3038-023 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
TOLD153 by Toshiba

TOLD153

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 810; Maximum Forward Current: .115 A; Maximum Operating Temperature: 50 Cel;
NX8570SC737-BA by Renesas Electronics

NX8570SC737-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1574; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
STH91004G by Infineon Technologies

STH91004G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .12 A; Minimum Operating Temperature: 0 Cel;
NX8562LB381-BA by Renesas Electronics

NX8562LB381-BA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 1538; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
STL81005H by Infineon Technologies

STL81005H

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1330; Minimum Operating Temperature: -40 Cel; Maximum Forward Voltage: 1.5 V;
NX8570SC832D-BA-A by Renesas Electronics

NX8570SC832D-BA-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
TOLD152R by Toshiba

TOLD152R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .095 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 810;
TOLD133 by Toshiba

TOLD133

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Peak Wavelength (nm): 830; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;