Infineon Technologies - OM6009SA

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OM6009SA by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number OM6009SA
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
Datasheet OM6009SA Datasheet
In Stock140
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 88 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-MSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .095 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 22 A
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