Infineon Technologies - OM6039SM

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OM6039SM by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number OM6039SM
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Transistor Application: SWITCHING; No. of Elements: 1;
Datasheet OM6039SM Datasheet
In Stock526
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 35 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 50 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-MDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .44 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 9 A
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