Infineon Technologies - OM60L60SB

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OM60L60SB by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number OM60L60SB
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; No. of Elements: 1; Maximum VCEsat: 1.8 V; Maximum Operating Temperature: 150 Cel;
Datasheet OM60L60SB Datasheet
In Stock697
NAME DESCRIPTION
Maximum Collector Current (IC): 75 A
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 1.8 V
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